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| IMD16A Transistors Power management(dual digital transistors) IMD16A Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. External dimensions (Unit : mm) (4) 1.6 2.8 0.15 0.8 0to0.1 (3) 0.3to0.6 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Package, marking, and packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) IMD16A SMT6 D16 T108 3000 Equivalent circuit (4) (5) (6) R2=2.2k R1=2.2k DTr1 DTr2 R1=100k (3) (2) (1) Absolute maximum ratings (Ta=25C) DTr1 (PNP) Parameter Supply voltage Input voltage Output current Symbol VCC VIN IC Limits -50 -12 5 -500 Unit V V mA DTr2 (NPN) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 50 5 100 Unit V V V mA Total Parameter Collector power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Limits 300(TOTAL) 150 -55 to +150 Unit mW C C 200mW per element must not be exceeded. 1.1 0.95 0.95 1.9 2.9 (6) 0.3 (5) (2) (1) Rev.B 1/3 IMD16A Transistors Electrical characteristics (Ta=25C) DTr1 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2 / R1 Min. - -2 - - - 82 - 1.54 0.8 Typ. - - - - - - 250 2.2 1.0 Max. -0.3 - -0.3 -3 -0.5 - - 2.86 1.2 Unit V V mA A - MHz k - Conditions VCC= -5V , IO= -100A VO= -0.3V , IO= -20mA IO/II= -50mA / -2.5mA VI= -5V VCC= -50V , VI=0V IO= -50mA , VO= -5V VCE= -10V , IE=50mA , f=100MHz - - 1 2 1 Measured using pulse current. 2 Transition frequency of mounted transistor. DTr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R1 Min. 50 50 5 - - - 100 - 70 Typ. - - - - - - 250 250 100 Max. - - - 0.5 0.5 0.3 600 - 130 Unit V V V A A V - MHz k IC=50A IC=1mA IE=50A VCB=50V VEB=4V IC/IB=1mA/0.1mA VCE=5V , IC=1mA VCE=10V , IE=-5mA , f=100MHz - Conditions Transition frequency of mounted transistor. Rev.B 2/3 IMD16A Transistors Electrical characteristic curves DTr1 (PNP) 100 50 20 10 5 2 1 500m 200m 100m 500 1m 2m 5m 10m 20m 50m 100m 200m 500m Ta= -40C Ta=25C Ta=100C VO=0.3V 10m 5m OUTPUT CURRENT : Io (A) VCC=5V 1k 500 Ta=100C VO=5V INPUT VOLTAGE : VI(on) (V) 2m DC CURRENT GAIN : GI 1m 500 200 100 50 20 10 5 2 1 0 200 100 50 20 10 5 2 Ta=25C Ta= -40C Ta=100C Ta=25C Ta= -40C 500m 1 1.5 2 2.5 3 1 500 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. Output current (ON characterisitics) Fig.2 Output current vs. Input voltage (OFF characteristics) Fig.3 DC current gain vs. Output current characteristics 1 500m IO/II=20/1 Ta=100C OUTPUT VOLTAGE : VO(on) (V) 200m 100m 50m 20m 10m 5m 2m 1m 500 1m 2m Ta=25C Ta= -40C 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. Output current characteristics DTr2 (NPN) 500 DC CURRENT GAIN : hFE Ta=100C VCE=5V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k 1 IC/IB=10/1 500m 200m 100m 50m 20m 10m 5m 2m 1m 10 20 50 100 200 500 1m 2m 5m 10m 200 100 50 20 10 5 2 1 10 20 50 100 200 500 1m 2m 5m 10m Ta=25C Ta= -40C Ta=100C Ta=25C Ta= -40C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. Output current characteristics Fig.6 Output voltage vs. Output current characteristics Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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